Terahertz imaging cameras | 테라헤르츠 비파괴카메라

The detectors are fabricated from GaAs high-mobility heterostructure in the standard semiconductor cycle using conventional optical lithography. The imaging sensor is manufactured on a single wafer. That process ensures high homogeneity and reproducibility of the plasmonic detector parameters (pixel-to-pixel deviation responsivity is within 20-percent range). Each unit detector proved to have room-temperature responsivity up to 50 kV/W with read-out circuitry and noise equivalent power 1 nW/Hz0.5 in the frequency range 10 GHz — 1 THz. The detection mechanism is based on transformation of incident THz radiation into two-dimensional electron system (2DES) plasma oscillation. Plasma wave is then rectified on the inhomogeneity of 2DES electron density in the defect region.

테라 헤르츠 카메라는 해상도에 속도에 따라

- Tera 256 ( 16x16 픽셀)
- Tera 1024 Linear ( 256x4 x 4 픽셀)
- Tera 1024 (32x32 픽셀)
- Tera 4096 (64x64 픽셀)

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